[1] Chen Yingjie, Xiao Jinglin. Influences of Coulomb field on probability density of parabolic linear bound potential quantum dot qubit [J].Chinese Journal of Quantum Electronics (量子电子学 报),2012, 29(5): 602-608(in Chinese).[2] Wang Ming, Gu Yongxian, Ji Haiming, Yang Tao, Wang Zhanguo. Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model [J]. Chin. Phys. B, 2011, 20(7): 077301.[3] Wu Xuanzhi. High-efficiency polycrystalline CdTe thin-film solarcells [J]. Solar Energy, 2004, 77(6): 803.[4] Zhang Jinfeng, Wang Hailong. Binding energies of excitons in symmetrical Cd1-xMnxTe/CdTe Parabolic quantum well [J]. Chinese Journal of Quantum Electronics (量子电子学报), 2015, 32(5): 635-640(in Chinese).[5] Zhang Bingpo, Cai Chunfeng, Cai Xikun. Study of growth of [111]-oriented CdTe thin films by MBE [J]. Acta Phys. Sin (物理学报), 2012, 61(4): 046802(in Chinese).[6] Li Chunxia. First-principles study on the structural and electronic properties of middle-small size CdS and CdTe clusters [J]. Journal of Atomic and Molecular Physics(原子与分子物理 学报), 2007, 24(5): 1061-1064 (in Chinese).[7] Wu Yunfeng, Liang Xixia, K.K.Baja. On the binding energies of excitons in polar quantum well structures in a weak electric field[J]. Chin. Phys. B.,2005,14(11): 2314-2319.[8] Lin Guijiang, Lai Hongkai, Li Cheng, Chen Songyan, Yu Jinzhong. Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells [J].Chin. Phys. B, 2008, 17(9): 3479-3483.[9] Xie Wenfang.Zhu Wu. Effect of the Electron LO Phonon Coupling on an Exciton Quantum Dot [J]. Commun .Theor. Phys., 2012,38(9): 375-378.[10] Xia Zhilin, Fan Zhengxiu,Shao Jianda. Electrons-phonons collision velocity in films radiated by laser [J]. Acta Phys. Sin (物理学报), 2006, 55(6): 3007-3012 (in Chinese).[11] Yang Fujun, Ban Shiliang. Influence of optical-phonon scattering on electron mobility in wurtzite AlGaN/AlN/GaN heterostrucres [J]. Acta Phys. Sin (物理学报), 2012,61(8): 087201 (in Chinese).[12] Yin Xin, Wang Hailong, Gong Qian, Feng Songlin. Binding energy of hydrogenic donor impurity in GaInAsP /InP stepped quantum well [J]. Chinese Journal of Quantum Electronics (量子电子学报), 2013,?30(2):?236-242(in Chinese). [13] Wang Hailong, Jiang Liming ,Gong Qian.The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1?xN spherical quantum dot [J]. Physica B, 2009, 404(1): 122- 126.[14] Paul Harrison. Quantum Wells, Wires and Dots ,Second Edition [M]. England:John Wiley and Sons Ltd, 2009. 1-168.[15] Augusto M. Alcalde, Gerald Weber. Electron-phonon relaxation rates in InGaAs-InP and HgCdTe- CdTe quantum wells [J]. J.Appl.Phys. 1999, 85(10): 7276-7281.[16] Zhang Jijun, Wang Linjun, Shi Lingyun. Magnetization and Faraday effect of Cd0.8Mn0.2Te single crystal[J].Journal of Functional Materials (功能材料), 2011, 42(5): 831-837.[17] H.Arabshahi. G.R.Ebrahimi and S.Gholafroz. A study of Inelastic Electron-Polar Optical Phonon Scattering in CdTe [J]. Journal of Engineering and Applied Science, 2010, 5(6): 427-429. |