[1] Richard B S. Luminescent layers for enhanced silicon solar cell performance: Down-conversion [J]. Solar Energy Materials and Solar Cells, 2006, 90(9): 1189-1207. [2] Vergeer P, Vlugt T J H, Kox M H F, et al. Quantum cutting by cooperative energy transfer in YbxY1-xPO4:Tb3+ [J]. Physical Review B, 2005, B71(1): 014119. [3] Trupke T, Green M A, Wurfel P. Improving solar cell efficiencies by down-conversion of high energy photons [J]. Journal of Applied Physics, 2002, 92(3): 1668-1674. [4] Auzel F. Upconversion and anti-Stokes processes with f and d ions in soilds[J]. Chemical Reviews, 2004, 104(1): 139-174. [5] Guo Changxin, Lin Yong, Yao Lianzeng, et al. Spectral properties of Na5Er(WO4)4 luminescent crystal and spectral parameter calculation of Er3+ [J]. Chinese Journal of Lasers (中国激光) ,1995, 22(3):223-227(in Chinese). [6] Zheng Haixing, Wu Guangzhao, Gan Fuxi. Luminescence studies of Er3+ ions in fluoride, fluorophosphate and phosphate glasses[J]. Acta Physica Sinica(物理学报), 1985, 6(4): 829-841(in Chinese). [7] Tanade S, Ohyagi T, Soga N, et al. Compositional dependence of Judd-Ofelt parameters of Er3+ ions in alkali-metal borate glasses[J]. Physical Review B, 1992, 46(6): 3305-3310. [8] Weber M J. Probabilities for radiative and nonradiative decay of Er3+ in LaF3 [J]. Physical Review, 1967, 157(157): 262-272. [9] Carnall W T, Fields P R, Rajnak K. Electronic energy levels in trivalent lanthanide aquo ions. I. Pr3+, Nd3+, Pm3+, Sm3+, Dy3+, Ho3+, Er3+ and Tm3+ [J]. Journal of Chemical Physics, 1968, 49(10): 4424-4450. [10] Desurive E. Study of the complex atomic susceptibility of erbium-doped fiber amplifiers [J]. Lightwave Technology, 1990, 8(10):1517-1527. [11] Chen Xiaobo, Salamo G J, Yang Guojian, et al. Multiphoton near-infrared quantum cutting luminescence phenomena of Tm3+ ion in (Y1-xTmx)3Al5O12 powder phosphor[J]. Optics Express, 2013, 21(5): 829-840. [12] Wang Dagang, Zhou Yaxun, Wang Xunsi, et al. Upconversion luminescence properties of tellurite glasses applied for white light emission [J]. Journal of Optical Electronics Laser (光电子激光), 2010, 21(10): 1473-1476(in Chinese). |