Chinese Journal of Quantum Electronics ›› 2020, Vol. 37 ›› Issue (1): 93-98.

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Research on narrow-band gap half lead-tin perovskite solar cells

NI Bin1,2, LI Xinhua1,2   

  1. 1 School of Physics and Materials Science, Anhui University, Hefei 230031, China; 2 Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
  • Received:2019-07-15 Revised:2019-09-03 Published:2020-01-28 Online:2020-01-28

Abstract: Due to its narrow band gap and low toxicity, the lead-tin perovskite material is widely used in fabricating perovskite solar cells. However, the efficiency of lead-tin perovskite is low, because of its poor film quality. In order to improve the film quality, we added dimethyl sulfoxide into the precursor solution to decrease the crystallization speed and fabricated a dense pinhole-free perovskite film. Moreover, tin fluoride and fullerene derivatives were added to reduce defects in the perovskite lattice and grain boundaries and surface. An efficiency up to 15.1% was recorded by the above methods.

Key words: solar cell, lead-tin perovskite, improve morphology, passivate defect

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