Tunneling mode in one‑dimensional photonic crystals containing Dirac material

doi:10.3969/j.issn.1007-5461.2026.04.014

Abstract

Abstract: Photonic crystals have received considerable attention due to their unique electromagnetic properties and extensive applications in optoelectronic devices. This paper investigates the tunneling mode in one-dimensional symmetric photonic crystals composed of Dirac materials with impurities. It is found that the transmission spectrum of photonic crystals exhibits three types of photonic band gaps: zero-average refractive index, Dirac, and Bragg. When impurities are introduced, the Dirac band gap does not support tunneling modes, whereas multiple complete tunneling modes emerge in the zero-average refractive index and Bragg band gaps with variations in the incidence angle of light and the structural parameters of Dirac materials, and mode separation, merging, and multi-degree-of-freedom control of mode frequency intervals can be achieved. In addition, owing to interface effects and the dispersion characteristics of Dirac materials, the electric field in photonic crystals is localized at the interfaces of the periodic material units, exhibiting a symmetric distribution relative to the defect layer and peaking near the defect layer.

Key words: optoelectronics, photon tunneling, transfer matrix, Dirac material

CLC Number:

O451

XU Lei , WANG Xinglin . Tunneling mode in one‑dimensional photonic crystals containing Dirac material[J]. Chinese Journal of Quantum Electronics, 2026, 43(4): 649-657.

References

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