Quantum tunneling properties and realization in low-biased well of wells structures

Abstract

Abstract:

Resonant tunneling which is the tunneling probability of electron in a certain energy value in the vicinity of the form of a sharp peak in tunneling, is by far the most promising application to the actual circuit and system of quantum devices, characterized by the response speed of the device very quickly. In this paper, the transfer matrix method calculates relations between transmission coefficient of the symmetric double-barrier, three-barrier quantum well structure strain and incident electron energy and tunneling current and bias voltage, simulated tunneling coefficient and the I-V curve of strained multi-quantum well structure. By theoretical calculation, the tunneling current peak value with the experimental values are in good, for the design of resonant tunneling diodes and to provide theoretical guidance for the further experiment of great significance.

Key words: optoelectronics, quantum well, resonant tunneling, transmission coefficient, tunneling current

CLC Number:

O471.1

An Panlong, Zhao Ruijuan. Quantum tunneling properties and realization in low-biased well of wells structures[J]. J4, 2011, 28(5): 629-634.

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