Chinese Journal of Quantum Electronics

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Effect of band bending on exciton in a finite-barries quantum well

ZHANG Jinfeng1, LI Teng2   

  1. 1 College of Information Engineering, Shandong Vocational College of Foreign Affairs Translation, Weihai 264504, China; 2 Information Management Office, Shandong Vocational College of Foreign Affairs Translation, Weihai 264504, China
  • Published:2018-11-28 Online:2018-11-14
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Abstract: Based on effective mass approximation and variational method, the actual band binding potential in quantum well is approximated by the triangular potential considering band bending effect. The binding energy, Bohr radius and non-correlation probability of excitons in Cd1-xMnxTe/CdTe quantum wells are discussed and compared with square wells. The change of binding energy with well width and Mn component is given. Results show that the exciton binding energy increases first and then decreases with well width under the triangular potential approximation, which is similar to square well, but obviously smaller than square well. The difference between them increases with the well width and Mn component (barrier height). Results show that the correction of band bending should be considered in the research of related issues.

Key words: optoelectronics, variational method, band bending, quantum well, exciton

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