Performance optimization of AlGaN-based deep ultraviolet
laser diode with M-shaped hole barrier structure

doi:10.3969/j.issn.1007-5461.2022.04.013

Abstract

Abstract: In order to reduce the hole leakage of deep ultraviolet laser diode (DUV-LD) in the n-type region effectively and optimize its performance, a novel M-shaped hole blocking layer (HBL) structure is proposed. By using Crosslight software，the rectangular, N-shaped and M-shaped HBL structures are simulated and compared. It is found that the M-shaped HBL structure can more effectively reduce the hole leakage in the n-type region, increase the radiation recombination rate in the quantum well, reduce the threshold voltage and threshold current of the laser diode, and improve the electro-optic conversion efficiency and output power of the laser diode. It is shown that the M-shaped HBL structure can effectively reduce the hole leakage of DUV-LD in the n-type region and optimize its performance.

Key words: laser techniques, deep ultraviolet laser diode, AlGaN, M-shaped hole blocking layer, hole leakage

CLC Number:

O472

ZHANG Aoxiang, WANG Yao, WANG Mengzhen, WEI Shiqin, WANG Fang, LIU Yuhuai, . Performance optimization of AlGaN-based deep ultraviolet laser diode with M-shaped hole barrier structure[J]. Chinese Journal of Quantum Electronics, 2022, 39(4): 583-590.

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Performance optimization of AlGaN-based deep ultraviolet laser diode with M-shaped hole barrier structure

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