关键词: 材料, 界面态密度, 热电子发射, 键合

Abstract:

Bonding technique of III-V group materials is important for fabrication of optoelectronic devices and realization of OEIC. However, electrical characteristic of the bonded interface, which is very important for the device design, is seldom investigated yet. Based on thermionic emission theory and assumption that interface states distribute continuously in the band gap, and combined with distribution function, calculation model of interface states for bonded structure could be set up. This model is applied to analyze the electrical characteristics of bonded GaAs/InP wafers, which were subjected to different surface treatment and annealing temperature. Interface state density was firstly calculated after the definition of initialized electronic barrier of GaAs. Results show that sample bonded at 550 with hydrophobic surface treatment has the lowest initial barrier height and the smallest interface state density; as a result, it performs best in terms of I-V characteristics.

Key words: materials, interface state density, thermionic emission, bonding