J4 ›› 2012, Vol. 29 ›› Issue (5): 597-601.

• 非线性光学 • 上一篇    下一篇

GaAs量子阱中退极化效应对光学整流的影响

彭飞   

  1. 南通大学江苏省专用集成电路设计重点实验室, 江苏 南通 226019
  • 收稿日期:2011-11-02 修回日期:2011-12-23 出版日期:2012-09-28 发布日期:2012-09-02
  • 通讯作者: 彭飞(1968-)甘肃人,博士,讲师,主要从事半导体电子技术研究。 E-mail:peng_fei@ntu.edu.cn

Influence of depolarization effect on optical rectification in GaAs quantum well

PENG Fei   

  1. Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China
  • Received:2011-11-02 Revised:2011-12-23 Published:2012-09-28 Online:2012-09-02

摘要:

用弛豫时间近似和紧致密度矩阵方法,在施加偏向电场的GaAs方量子阱中,研究了退极化场对光学整流的影响。结果表明,退极化场使共振峰的位置向高能方向发生移动。对应三个不同的偏向电场 , ,和 的共振峰的位置分别为 , 和 .共振峰位置的偏移量分别为5.96 、5.99 、6.28 ,其偏移量随偏向电场的增大而略有增大。

关键词: 非线性光学, 光学整流, 退极化效应, 量子阱

Abstract:

The influence of the depolarization effect on the optical rectification in electric-field-biased GaAs quantum well is studied using relaxation time approximation and a compact density-matrix approach. The results obtained show that the depolarization effect shifts the position of the resonance peak. For three different bias field, , , and , the peak position is , and , respectively. The shift of the peak position is 5.96 , 5.99 and 6.28, respectively, which increases with the bias field.

Key words: nonlinear optics, optical rectification, depolarization effect, quantum well

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