飞秒激光诱发硅PIN光电二极管饱和特性的实验研究

J4 ›› 2012, Vol. 29 ›› Issue (6): 671-676.

飞秒激光诱发硅PIN光电二极管饱和特性的实验研究

豆贤安¹,孙晓泉¹, 汪作来²

1 电子工程学院脉冲功率激光技术国家重点实验室, 安徽合肥 230037；
2 电子工程学院研究生处，安徽合肥 230037

收稿日期:2012-03-05 修回日期:2012-03-23 出版日期:2012-11-28 发布日期:2014-03-20
通讯作者: 孙晓泉(1962-)博士，教授，主要从事光电技术研究。 E-mail:sunxq@ustc.edu
作者简介:豆贤安(1983-)博士生，主要从事光电技术研究，Email: ankolkol@sina.com。
基金资助:
国家重点实验室基金项目(10J1004)

Experimental research on saturation characteristics of silicon p-i-n photodiode induced by femtosecond laser

Dou Xian-an¹, Sun Xiaoquan¹, Wang Zuolai ²

1 State Key Laboratory of Pulsed Power Laser Technology Electronic Engineering Institute, Hefei 230037, China；
2 Graduate Department ， Electronic Engineering Institute, Hefei 230037, China

Received:2012-03-05 Revised:2012-03-23 Published:2012-11-28 Online:2014-03-20

摘要/Abstract

摘要：

实验研究了不同脉冲能量的飞秒激光诱发硅PIN光电二极管瞬态响应信号的特性。发现了探测器响应瞬态响应信号相继出现了三个明显的相位，深入讨论了飞秒激光诱发的高注入载流子在瞬态响应信号演化过程中所起的作用。结果表明，高注入载流子产生的空间电荷屏蔽效应是导致瞬态响应信号呈现三个相位的主要因素，它导致瞬态响应信号的持续时间主要取决于载流子双极扩散的速度。增加飞秒激光的脉冲能量会进一步延长探测器瞬态响应信号的持续时间。因此，飞秒激光会削弱探测器的工作性能，尤其是在高速信号探测中的工作性能。

关键词: 超快光学, 飞秒激光, 光电子学, 硅PIN光电二极管, 瞬态响应, 空间电荷屏蔽效应

Abstract:

The transient response of silicon p-i-n photodiodes irradiated by femtosecond laser with a range of pulse energy levels was investigated experimentally. The spatiotemporal response exhibits three clearly chronological phases. The role of high-injection induced by femtosecond laser effects on the evolving spatiotemporal response was discussed. The results indicate that the space-charge screening effects lead to three clearly separable collection phases with ambipolar diffusion primarily determining the length of the induced transient response signal. Increased femtosecond laser pulse energy levels would further elongate the transient length which would severely degrade the performance of photodetector especially in the high speed signal detection.

Key words: ultrafast optics, femtosecond laser, optoelectronics, silicon p-i-n photodiode, transient response, space-charge screening effect

中图分类号:

O431

豆贤安，孙晓泉，汪作来. 飞秒激光诱发硅PIN光电二极管饱和特性的实验研究[J]. J4, 2012, 29(6): 671-676.

Dou Xian-an, Sun Xiaoquan, Wang Zuolai . Experimental research on saturation characteristics of silicon p-i-n photodiode induced by femtosecond laser[J]. J4, 2012, 29(6): 671-676.

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