外加电场对GaN/AlxGa1-xN双量子阱中性施主束缚能的影响

J4 ›› 2013, Vol. 30 ›› Issue (3): 360-366.

外加电场对GaN/AlxGa1-xN双量子阱中性施主束缚能的影响

孟婧¹,王海龙²,龚谦³,封松林³

1 曲阜师范大学物理工程学院，山东曲阜 273165； 2 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室，上海，200050

收稿日期:2012-04-13 修回日期:2012-05-08 出版日期:2013-05-28 发布日期:2013-05-06
通讯作者: 王海龙（1971－）山东省莘县人，博士，教授，主要从事光通信与半导体光电子学方面的研究。 E-mail:hlwang@mail.qfnu.edu.cn
作者简介:孟婧（1983－），女，山东省菏泽市人，研究生,主要从事低维半导体纳米结构电子态的研究。E-mail: mmmjjjcg@163.com
基金资助:
国家自然科学基金(60976015)，山东省自然科学基金 (ZR2010FM023)以及信息功能材料国家重点实验开放课题资助

Influence of electric field on binding energy of neutral donor in symmetrical GaN/AlxGa1-xN double quantum wells

Meng Jing, Wang Hai-long，Gong Qian，Feng Song-lin

1 College of Physics and Engineering, Qufu Normal University, Qufu 273165, China； 2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Received:2012-04-13 Revised:2012-05-08 Published:2013-05-28 Online:2013-05-06

摘要/Abstract

摘要： 在有效质量包络函数理论下，利用变分法计算了未加电场以及加入电场后双量子阱中施主杂质各种情况下的束缚能，讨论了双量子阱中间势垒高度、施主杂质位置对杂质束缚能的影响。给出了加入电场后施主位置不同时的束缚能和波函数，以及量子阱宽度不同时的束缚能，并且计算了未加电场和加入电场后中间势垒高度变化以及宽度不同时的束缚能。当双量子阱中间垒宽一定时，束缚能随着阱宽的变化会出现一个峰值。在阱宽一定时，随着中间垒宽度的增加，束缚能逐渐减小，并在垒宽增加到一定宽度时双量子阱情况与单量子阱情况相似，束缚能不再明显变化。计算结果对设计和研究量子阱发光和探测器件有一定的参考价值。

关键词: 光电子学, 束缚能, 中性施主, 变分法, 打靶法, 对称双量子阱

Abstract: Under the effectives-mass envelope-function theory, the binding energy of the system in symmetric double quantum wells are theoretically calculated using the variational method. The influence of applied external electric fields, barrier height, quantum well width and the position of donors on the binding energies of donor impurities are investigated. The quantum well potential energy changes significantly with applied external electric filed. The binding energy and the wave functions with the donor in the different position are presented without and with external electric field. Variations of donor binding energy with the centre barrier width are also calculated. With the fixed the middle barrier of double quantum wells, the binding energy increases until it reaches a maximum value, and then decreases as the well width increases. The results are meaningful and can be applied in the design of optoelectronic devices based on quantum well structures.

Key words: optoelectronics, binding energy, neutral donor, variational method, shooting method, symmetric double quantum well

中图分类号:

O413.1
O511

孟婧王海龙龚谦封松林. 外加电场对GaN/AlxGa1-xN双量子阱中性施主束缚能的影响[J]. J4, 2013, 30(3): 360-366.

Meng Jing, Wang Hai-long，Gong Qian，Feng Song-lin . Influence of electric field on binding energy of neutral donor in symmetrical GaN/AlxGa1-xN double quantum wells[J]. J4, 2013, 30(3): 360-366.

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