钛宝石激光晶体研究进展

摘要/Abstract

摘要： 钛宝石(Ti:Al2O3) 激光晶体具有高硬度、高热导、宽带吸收、宽带发射等性能特点, 广泛应用于可调谐、高功率和超快激光领域。近年来, 钛宝石晶体的生长技术、基础理论分析和器件化应用都得到了极大的发展, 对其进行的研究也越来越深入、广泛。综述了钛宝石晶体材料研究和应用的主要进展。

关键词: 材料, 钛宝石晶体, 性能, 晶体生长方法, 残余红外吸收, 器件应用

Abstract: Titanium doped sapphire (Ti:Al2O3) laser crystals are widely used in the tunable laser, high power laser and ultra-fast laser because of their characteristics of high hardness, high thermal conductivity, broadband absorption and broadband emission. In recent years, the growth technology, theoretical analysis and device-based application of Ti:Al2O3 crystals have been greatly developed, and the research on Ti:Al2O3 crystals has been more and more intensive and extensive. The research and application of Ti:Al2O3 crystal materials are reviewed.

Key words: material, titanium doped sapphire crystal, characteristics, crystal growth method, residual infrared absorption, device application

中图分类号:

徐民, 龚巧瑞, 李善明, 杭寅∗. 钛宝石激光晶体研究进展[J]. 量子电子学报, 2021, 38(2): 148-159.

XU Min, GONG Qiaorui, LI Shanming, HANG Yin∗. Research progress of titanium doped sapphire laser crystal[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 148-159.

参考文献 57

[1]	Wang J Y, Wu Y C. Progress of the research on photoelectronic functional crystals [J]. Materials China, 2010, 29(10): 1-15.
	王继扬, 吴以成. 光电功能晶体材料研究进展[J]. 中国材料进展, 2010, 29(10): 1-15.
[2]	Wang J Y, Yu H H,Wu Y C, et al. Advanced materials and materials genome-review recent developments in functional crystals
	in China [J]. Engineering, 2015, 1(2): 192-210.
[3]	Lincoln Laboratory. Solid state research report [R]. MIT, 1982.
[4]	Moulton P. Titanium-doped sapphire: Tunable solid-sate laser [J]. Optics News, 1982, 8(6): 9.
[5]	Aggarwal R L, Sanchez A, Fahey R E, et al. Magnetic and optical measurements on Ti:Al2O3 crystals for laser applications:
	Concentration and absorption cross section of Ti3+ ions [J]. Applied Physics Letters, 1986, 48(20): 1345-1347.
[6]	Sanchez A, Strauss A J, Aggarwal R L, et al. Crystal growth, spectroscopy, and laser characteristics of Ti:Al2O3 [J]. IEEE
	Journal of Quantum Electronics, 1988, 24(6): 995-1002.
[7]	Han X Z, Feng X Q, Li W F, et al. One kind of new Ti3+ luminous center in Ti:Al2O3 crystals [J]. Optical Materials, 2020,
10	5: 109881.
[8]	Xu M, Si J L, Zhang X C, et al. Study on thermal properties of titanium-doped sapphire crystal [J]. Journal of Synthetic Crystal,
20	14, 43(5): 1043-1049.
	徐民, 司继良, 张小翠, 等. 掺钛蓝宝石晶体热学性质研究[J]. 人工晶体学报, 2014, 43(5): 1043-1049.
[9]	Rapoport W R, Khattak C P. Titanium sapphire laser characteristics [J]. Applied Optics, 1988, 27(13): 2677-2684.
[10]	Xu M, Si J L, Zhang X C, et al. Study on growth of large-sized Ti:Al2O3 crystals by the temperature gradient technique [J].
	Journal of Synthetic Crystal, 2014, 43(1): 2781-2786.
	徐民, 司继良, 张小翠, 等. 温度梯度法生长大尺寸钛宝石晶体研究[J]. 人工晶体学报, 2014, 43(1): 2781-2786.
[11]	Lacovara P, Esterowitz L, Kokta M. Growth, spectroscopy, and lasing of titanium-doped sapphire [J]. IEEE Journal of Quantum
	Electronics, 1985, QE-21(10): 1614-1618.
[12]	Fukuda T, Okano Y, Kodama N, et al. Growth of bubble-free Ti-doped Al2O3 single crystal by the Czochralski method [J].
	Crystal Research & Technology, 1995, 30(2): 185-188.
[13]	Alombert-Goget G, Li H, Faria J, et al. Titanium distribution in Ti-sapphire single crystals grown by Czochralski and Verneuil
	technique [J]. Optical Materials, 2016, 51: 1-4.
[14]	Yin S T,Wu L S. Study on the growth of high quality long sized titanium doped sapphire (Ti:Al2O3) crystal and practical lamp
	pump Ti:Al2O3 laser [J]. Materials Reports, 2001, 15(2): 46-47.
	殷绍唐, 吴路生. 优质长尺寸掺钛宝石晶体生长及实用型灯泵钛宝石激光器的研究[J]. 材料导报, 2001, 15(2): 46-47.
[15]	Roth P W, Burns D, Kemp A J. Power scaling of a directly diode-laser-pumped Ti:sapphire laser [J]. Optics Express, 2012,
20	(18): 20629-20634.
[16]	G¨urel K, Wittwer V J, Hoffmann M, et al. Green-diode-pumped femtosecond Ti:sapphire laser with up to 450 mW average
	power [J]. Optics Express, 2015, 23(23): 30043-30048.
[17]	Li R X, Chen Y, Leng Y X, et al. Frontiers in ultrafast optics and ultra-intense laser technology [J]. Scientia Sinica Informationis,
20	16, 46(9): 1236-1254.
	李儒新, 程亚, 冷雨欣, 等. 超快光学与超强激光技术前沿研究[J]. 中国科学:信息科学, 2016, 46(9): 1236-1254.
[18]	Joyce D B, Schmid F. Progress in the growth of large scale Ti:sapphire crystals by the heat exchanger method (HEM) for
	petawatt class lasers [J]. Journal of Crystal Growth, 2010, 312: 1138-1141.
[19]	Ning K J, Liu Y C, Ma J, et al. Growth and characterization of large-scale Ti:sapphire crystal using heat exchange method for
	ultra-fast ultra-high-power lasers [J]. CrystEngComm, 2015, 17: 2801-2805.
[20]	Cao H, Gan Z B, Liang X Y, et al. Optical property measurements of 235 mm large-scale Ti:sapphire crystal [J]. Chinese
	Optics Letters, 2018, 16(7): 071401.
[21]	Hang Y, Xu M, Zhang L H, et al. Domestic large sized Ti:sapphire crystal assists the world’s strongest pulsed laser amplification
	output [J]. Journal of Synthetic Crystal, 2019, 48(5): 809-811.
	杭寅, 徐民, 张连翰, 等. 国产大尺寸钛宝石晶体助力世界最强脉冲激光放大输出[J]. 人工晶体学报, 2019, 48(5):
80	9-811.
[22]	Nehari A, Brenier A, Panzer G, et al. Ti-doped sapphire (Al2O3) single crystals grown by the Kyropoulos technique and optical
	characterizations [J]. Crystal Growth & Design, 2011, 11(2): 445-448.
[23]	Alombert-Goget G, Sen G, Pezzani C, et al. Large Ti-doped sapphire single crystals grown by the Kyropoulos technique for
	petawatt power laser application [J]. Optical Materials, 2016, 61: 21-24.
[24]	Cui F Z, Zhou Y Z, Qiao J W, et al. Growth of high quality sapphire crystal by temperature gradient technique [J]. Journal of
	the Chinese Ceramic Society, 1980, 8(2): 109-113.
	崔凤柱, 周永宗, 乔景文, 等. 导向温梯法生长优质兰宝石单晶[J]. 硅酸盐学报, 1980, 8(2): 109-113.
[25]	Zhang Q, Hu B, Deng P Z. Investigation of dislocation in sapphire and Ti3+-doped sapphire single crystals [J]. Journal of
	Synthetic Crystal, 1991, Z1: 367.
	张强, 胡兵, 邓佩珍. 白宝石、掺钛宝石的位错[J]. 人工晶体学报, 1991, Z1: 367.
[26]	Liu J H, Deng P Z, Gan F X. Concentration effect on fluorescent characteristics of Ti:Al2O3 crystal [J]. Optical Materials,
19	95, 4(6): 781-785.
[27]	Dong J, Deng P Z. Ti:sapphire crystal used in ultrafast lasers and amplifiers [J]. Journal of Crystal Growth, 2004, 261: 514-519.
[28]	Peshev P, Delineshev S, Petrov V, et al. Bridgman-stockbarger growth and spectral characteristics of Al2O3:Ti3+ single crystals
[J]	Crystal Research & Technology, 1988, 23(5): 641-645.
[29]	Nizhankovskiy S V, Dan’ko A Y, Krivonosov E V, et al. Growth of large Ti:sapphire crystals by horizontal directional solidification
	in argon atmosphere [J]. Inorganic Materials, 2010, 46(1): 35-37.
[30]	Xu H, Jiang Y J, Fan X J, et al. Growth and characterization of Fe:Ti:Al2O3 single crystal by floating zone method [J]. Journal
	of Crystal Growth, 2013, 372: 82-86.
[31]	Moulton P F. Spectroscopic and laser characteristics of Ti:Al2O3 [J]. Journal of the Optical Society of America B, 1986, 3(1):
12	5-133.
[32]	Pinto J F, Esterowitz L, Rosenblatt G H, et al. Improved Ti:sapphire laser performance with new high figure of merit crystals
[J]	IEEE Journal of Quantum Electronics, 1994, 30(11): 2612-2616.
[33]	Fahey R E, Strauss A J, Sanchez A, et al. Tunable Solid State Lasers II [M]. New York: Springer, 1987: 82-88.
[34]	Aggarwal R L, Sanchez A, Stuppi M M, et al. Residual infrared absorption in as-grown and annealed crystals of Ti:Al2O3 [J].
	IEEE Journal of Quantum Electronics, 1988, 24(6): 1003-1008.
[35]	Yin S T, ChenW, Feng L, et al. Research on the broadly residual absorption of titanium doped sapphire [J]. Journal of Synthetic
	Crystal, 1997, 26(3): 246.
	殷绍唐, 陈伟, 风雷, 等. 掺钛宝石晶体的宽带残余吸收研究[J]. 人工晶体学报, 1997, 26(3): 246.
[36]	Zeng G P, Yin S T. Relation between residual infrared absorption and dislocations in Ti3+: -Al2O3 single crystal [J]. Journal
	of Synthetic Crystal, 2000, 29(s1): 203.
	曾贵平, 殷绍唐. 钛宝石晶体中的位错和红外残余吸收的关系[J]. 人工晶体学报, 2000, 29(s1): 203.
[37]	Zeng G P, Yin S T, Yu X L. The relation between infrared residual absorption and point defects in Ti3+: -Al2O3 single crystal
[J]	Chinese Journal of Quantum Electronics, 2002, 19(1): 25-30.
	曾贵平, 殷绍唐, 于锡玲. 钛宝石晶体中的红外残余吸收与点缺陷的关系[J]. 量子电子学报, 2002, 19(1): 25-30.
[38]	Matsunaga K, Nakamura A, Yamamoto T, et al. Theoretical study of defect structures in pure and titanium-doped alumina [J].
	Solid State Ionics, 2004, 172: 155-158.
[39]	Matsunaga K, Nakamura A, Yamamoto T, et al. First-principles study of defect energetics in titanium-doped alumina [J].
	Physical Review B, 2003, 68: 214102.
[40]	Pustovarov V A, Perevalov T V, Gritsenko V A, et al. Oxygen vacancy in Al2O3: Photoluminescence study and first-principle
	simulation [J]. Thin Solid Films, 2011, 519(19): 6319-6322.
[41]	Matsunaga K, Tanaka T, Yamamoto T, et al. First-principles calculations of intrinsic defects in Al2O3 [J]. Physical Review B,
20	03, 68: 085110.
[42]	Matsunaga K, Mizoguchi T, Nakamura A, et al. Formation of titanium-solute clusters in alumina: A first-principles study [J].
	Applied Physics Letters, 2004, 84(23): 4795-4797.
[43]	Kravchenko L Y, Fil D V. Defect complexes in Ti-doped sapphire: A first principles study [J]. Journal of Applied Physics,
20	18, 123(2): 023104.
[44]	Moulton P F, Cederberg J G, Stevens K T, et al. Characterization of absorption bands in Ti:sapphire crystals [J]. Optical
	Materials Express, 2019, 9(5): 2216-2251.
[45]	Klein J, Kafka J D. The Ti:sapphire laser: The flexible research tool [J]. Nature Photonics, 2010, 4: 289-289.
[46]	Strickland D, Mourou G. Compression of amplified chirped optical pulses [J]. Optics Communications, 1985, 56: 219-221.
[47]	Perry M D, Pennington D, Stuart B C, et al. Petawatt laser pulses [J]. Optics Letters, 1999, 24(3): 160-162.
[48]	Aoyama M, Yamakawa K, Akahane Y, et al. 0.85 PW, 33 fs Ti:sapphire laser [J]. Optics Letters, 2003, 28(17): 1594-1596.
[49]	Chu Y X, Liang X Y, Yu L H, et al. High-contrast 2.0 petawatt Ti:sapphire laser system [J]. Optics Express, 2013, 21(24):
29	231-29239.
[50]	Chu Y X, Gan Z B, Liang X Y, et al. High-energy large-aperture Ti:sapphire amplifier for 5 PW laser pulses [J]. Optics Letters,
20	15, 40(21): 5011-5014.
[51]	Li W Q, Gan Z B, Yu L H, et al. 339 J high-energy Ti:sapphire chirped-pulse amplifier for 10 PW laser facility [J]. Optics
	Letters, 2018, 43(22): 5681-5684.
[52]	Roth P W, Maclean A J, Burns D, et al. Directly diode-laser-pumped Ti:sapphire laser [J]. Optics Letters, 2009, 34(21):
33	34-3336.
[53]	Roth P W, Burns D, Kemp A J. Power scaling of a directly diode-laser-pumped Ti:sapphire laser [J]. Optics Express, 2012,
20	(18): 20629-20634.
[54]	Durfee C G, Storz T, Garlick J, et al. Direct diode-pumped Kerr-lens mode-locked Ti:sapphire laser [J]. Optics Express, 2012,
20	(13): 13677-13683.
[55]	Sawada R, Tanaka H, Sugiyama N, et al. Wavelength-multiplexed pumping with 478 and 520 nm indium gallium nitride laser
	diodes for Ti:sapphire laser [J]. Applied Optics, 2017, 56(6): 1654-1661.
[56]	Miao Z W, Yu H J, Zhang J Y, et al. Watt-level CW Ti:sapphire oscillator directly pumped with green laser diodes module [J].
	IEEE Photonics Technology Letter, 2020, 32(5): 247-250.
[57]	Liu H, Wang G Y, Jiang J W, et al. Sub-10 fs pulse generation