4H-SiC基紫外光电探测器的研究进展

摘要/Abstract

摘要： 介绍了4H-SiC材料用于高温、低电平紫外光电检测的优点，回顾总结了近年来4H-SiC基紫外光电探测器的研究进展，分析了改善4H-SiC基紫外光电探测器性能参数如降低暗电流、提高光电响应度等可采用的各种技术手段，探讨了4H-SiC基紫外光电探测器的发展趋势。

关键词: 光电子学；4H-SiC；紫外光电探测器

Abstract: Advances in 4H silicon carbide (4H-SiC) as a potential material for low-level ultraviolet (UV) radiation detection application at high-temperature, radiation hardened conditions are introduced. The latest progress in development of and the current state-of-art of different types of 4H-SiC-based UV photodetectors were reviewed. The approaches to improve the performances of the 4H-SiC-based photodetectors such as reducing the dark current and enhancing the photo responsivity were presented. The outlook for the development of 4H-SiC-based UV photodetectors are discussed.

Key words: optoelectronics; 4H-SiC; UV photodetector

中图分类号:

TN36

蔡加法，吴正云 . 4H-SiC基紫外光电探测器的研究进展[J]. J4, 2014, 31(4): 489-501.

CAI Jia-fa, WU Zheng-yun. Research Progress in 4H-SiC-based Ultraviolet Photodetectors[J]. J4, 2014, 31(4): 489-501.

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