量子电子学报 ›› 2022, Vol. 39 ›› Issue (4): 644-650.doi: 10.3969/j.issn.1007-5461.2022.04.020

• 半导体光电 • 上一篇    下一篇

退火温度和退火时间对不同衬底上 Mg2Si 薄膜结构的影响

廖杨芳1, 谢泉2∗   

  1. ( 1 贵州师范大学物理与电子科学学院, 贵州贵阳550001; 2 贵州大学大数据与信息工程学院, 贵州贵阳550025 )
  • 收稿日期:2021-03-30 修回日期:2021-04-19 出版日期:2022-07-28 发布日期:2022-07-28
  • 通讯作者: E-mail: qxie@gzu.edu.cn E-mail:E-mail: qxie@gzu.edu.cn
  • 作者简介:廖杨芳( 1977 - ), 女, 湖南衡阳人, 博士, 副教授, 主要从事半导体材料与器件方面的研究。E-mail: 723530283@qq.com
  • 基金资助:
    Supported by Guizhou Provincial Science and Technology Foundation (贵州省科技计划项目, 黔科合基础[2019] 1225号), Doctoral Research Program of Guizhou Normal University, China (贵州师范大学资助博士科研项目, GZNUD [2018] 15 号)

Effects of annealing temperature and annealing time on structure of Mg2Si films on different substrates

LIAO Yangfang1, XIE Quan2∗   

  1. ( 1 College of Physics and Electronic Sciences, Guizhou Normal University, Guiyang 550001, China; 2 College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China )
  • Received:2021-03-30 Revised:2021-04-19 Published:2022-07-28 Online:2022-07-28

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摘要： 以Mg2Si 烧结靶为靶材, 采用磁控溅射法在Si、石英和Al2O3 衬底上先沉积一层Mg2Si 非晶薄膜, 再 进行退火处理, 研究了衬底类型、退火温度及退火时间对Mg2Si 多晶薄膜结构的影响。结果表明: Si、石英、 Al2O3 三种衬底上Mg2Si 薄膜的最优退火温度和退火时间均为350 ◦C 和1 h。Al2O3 衬底上的Mg2Si 薄膜结晶 质量最佳, Si 衬底上的薄膜次之, 石英衬底上的薄膜结晶质量最不理想, 分析表明这种差异主要源于衬底与薄膜 之间的热失配不同。

关键词: 材料, 薄膜, Mg2Si, 退火温度, 退火时间, 衬底

Abstract: Taking Mg2Si sintered target as target, Mg2Si amorphous thin films were deposited on Si, quartz and Al2O3 substrates by magnetron sputtering method, and then the effects of substrate type, annealing temperature and annealing time on the structure of Mg2Si polycrystalline thin films were investigated. The results show that the optimal annealing temperature and annealing time of Mg2Si films on Si, quartz and Al2O3 substrates are all 350 ◦C and 1 h. The crystal quality of Mg2Si film on the Al2O3 substrate is the best, followed by that on Si substrate, and that on quartz substrate is the worst. And it is found that this difference is mainly due to the different thermal mismatch between the substrate and the film.

Key words: materials, thin film, Mg2Si, annealing temperature, annealing time, substrate

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