退火温度对蓝宝石衬底上Mg2Si薄膜质量和光学性质的影响

doi:10.3969/j.issn.1007-5461.2023.04.008

量子电子学报 ›› 2023, Vol. 40 ›› Issue (4): 492-499.doi: 10.3969/j.issn.1007-5461.2023.04.008

退火温度对蓝宝石衬底上Mg2Si薄膜质量和光学性质的影响

廖杨芳 1, 谢泉 2*

( 1 贵州师范大学物理与电子科学学院, 贵州贵阳 550001; 2 贵州大学大数据与信息工程学院, 贵州贵阳 550025 )

收稿日期:2021-07-23 修回日期:2021-08-17 出版日期:2023-07-28 发布日期:2023-07-28
通讯作者: qxie@gzu.edu.cn E-mail:qxie@gzu.edu.cn
作者简介:廖杨芳 ( 1977 - ) , 女, 湖南衡阳人, 博士, 副教授, 主要从事半导体材料与器件方面的研究。E-mail: 723530283@qq.com
基金资助:
贵州省科技计划项目 (黔科合基础 [2019] 1225号) , 贵州师范大学资助博士科研项目 (GZNUD [2018] 15 号)

Effect of annealing temperature on the quality and optical properties of Mg2Si films on sapphire substrates

LIAO Yangfang 1, XIE Quan 2*

( 1 Shool of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China; 2 College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China )

Received:2021-07-23 Revised:2021-08-17 Published:2023-07-28 Online:2023-07-28

摘要/Abstract

摘要： 采用磁控溅射法在蓝宝石衬底上制备了结晶良好的Mg2Si 多晶薄膜，研究了退火温度（375~475 oC）对薄膜晶体结构、表面形貌、拉曼光谱和光学性质的影响。X 射线衍射（XRD）结果表明，当退火温度为400 oC 时Mg2Si (220) 衍射峰强度最强，样品结晶质量最好，未见明显可观测的MgO 相。扫描电镜（SEM）结果表明，所有样品表面均呈现清晰可见的规则六边形，且退火温度对形貌影响较小。拉曼光谱结果显示所有样品均呈现出Mg2Si 薄膜的特征峰（256 cm-1附近的F2g振动模），同时出现345 cm-1附近的F1u (LO)声子模，表明生成样品均为结晶良好的Mg2Si 薄膜。对薄膜光学性质的研究结果表明，随着退火温度升高，样品光学带隙先增大后减小。

关键词: 材料, 薄膜, Mg2Si, 退火温度, 蓝宝石衬底, 光学带隙

Abstract: The Mg2Si polycrystalline films are fabricated on sapphire substrates by magnetron sputtering and post annealing treatment, and then the effect of annealing temperature (375~475 oC) on the crystal structure, surface morphology, Raman spectra and optical properties of the film is investigated. The X-ray diffraction (XRD) results show that when annealing temperature is 400 oC, the (220) diffraction peak of Mg2Si film is the strongest, the crystal quality is the best, and no obvious MgO phase can be observed. The scanning electron microscopy (SEM) results show that all samples are regular hexagonal, and the annealing temperature has little effect on the morphology. The Raman spectra results show that all samples exhibit the characteristic peaks of Mg2Si films (with F2g vibration mode at near 256 cm-1, and F1u (LO) phonon mode at near 345 cm-1), indicating that all fabricated samples are Mg2Si films with good crystallization. The results of optical properties of the sample films show that, with the increase of annealing temperature, the optical band gap of the samples increases first and then decreases.

Key words: material, thin film, Mg2Si, annealing temperature, sapphire substrate, optical band gap

中图分类号:

TN304

廖杨芳, 谢泉 . 退火温度对蓝宝石衬底上Mg2Si薄膜质量和光学性质的影响[J]. 量子电子学报, 2023, 40(4): 492-499.

LIAO Yangfang , XIE Quan . Effect of annealing temperature on the quality and optical properties of Mg2Si films on sapphire substrates[J]. Chinese Journal of Quantum Electronics, 2023, 40(4): 492-499.

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退火温度对蓝宝石衬底上Mg2Si薄膜质量和光学性质的影响

Effect of annealing temperature on the quality and optical properties of Mg2Si films on sapphire substrates

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