Density states properties of photonic crystal with group Ⅲ-Ⅴsemiconductor material

Abstract

Abstract:

Density states properties of two-dimension square lattice photonic crystals with Ⅲ-ⅤAIP, AIAs, AISb and GaP semiconductor material were calculated by plane wave expansion method (PWM). The results showed that they have wide photonic band gaps. The width of band gap increases gradually with the increasing of permittivity difference and gets the maximum value at f=0.2 in the normalized frequency. The data reveals among these photonic crystals, the one with AISb has the widest band gap. All these results provide theoretic basis for the photonic crystal devices.

Key words: optoelectronics, state density properties, plane wave expansion method, semiconductor material, photonic crystal

CLC Number:

O431.1

CHEN Shi-qin. Density states properties of photonic crystal with group Ⅲ-Ⅴsemiconductor material[J]. J4, 2012, 29(4): 491-494.

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Density states properties of photonic crystal with group Ⅲ-Ⅴsemiconductor material

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