Relationship between barrier height of single quantum well InGaN/GaN and LED photoelectric performance

Abstract

Abstract: Band gap of the InxGa1-xN was changed by doping with different concentrations of In content for changing the quantum well barrier height. Studied of the relationship between the type of barrier height and the power spectral density, the internal quantum efficiency, the light emitting power and the recombination rate of the InGaN/GaN quantum well light-emitting diode. The analysis results showed that: (1) the In content of the light-emitting diode and optical properties is not a linear relationship. (2) When the current density is low, the smaller the In content, the greater the peak of the spectral density and the power of the light emitting; (3) However, when the current density is larger, the greater the In content, the greater the peak of the spectral density and the power of the light emitting. (4) The blue-shift associated with the size of the current density, when current density is large, blue-shift is big, the smaller the contrary. Therefore, it should be according to the type of current density to select the content of In, so as to improve the luminous efficiency.

Key words: optoelectronics, Quantum well barrier height, In concentration, numerical simulate, InGaN/ GaN Light Emitting Diodes

CLC Number:

ZHANG Da-qing, LI Guo-bin, CHEN Chang-shui. Relationship between barrier height of single quantum well InGaN/GaN and LED photoelectric performance[J]. J4, 2014, 31(1): 107-115.

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