J4 ›› 2015, Vol. 32 ›› Issue (6): 673-677.

• Laser Tech. and Devices • Previous Articles     Next Articles

Fabrication of anatase TiO2 by KrF pulse laser annealing

ZHANG Zi-feng, ZHANG Zhi-wei, HONG Rong-dun, CHEN Xia-ping, WU Zheng-yun*   

  1. Department of Physics, Xiamen University, Xiamen 361005,  China
  • Received:2015-04-10 Revised:2015-05-09 Published:2015-11-28 Online:2015-11-05

Abstract:

TiO2 thin films of ~200 nm were prepared by RF magnetron sputtering on quartz substrates at room temperature, and then annealed by a KrF pulse laser with wavelength 248 nm under different power densities in the air. The effect of laser power density on the characteristics of films was systematically analyzed using X-ray diffractometry (XRD), Raman spectral, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atom force microscopy (AFM), High resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) and UV-vis spectrophotometer. The results showed that high-quality anatase TiO2 films can be obtained when the power density was 0.5 J/cm2. By increasing the power density continually, TiO2 showed the predominant orientation with rutile phase along (1 1 0) reflection, with the roughness of the films increasing.

Key words: KrF, pulse laser, semiconductor, TiO2, optical property

CLC Number: