Research progress on photoelectric properties of Ta5+ and
Nb5+ doped -Ga2O3 single crystals

Abstract

Abstract: As a wide band gap semiconductor material, -Ga2O3 has attracted wide attention from domestic and foreign scholars in recent years due to its superior optical properties, electrical properties and broad application prospects. Based on the in-depth research of our team on the two important topics of how to prepare -Ga2O3 single crystals and how to control the electrical and optical properties of - Ga2O3 single crystals by doping with group V ions, the preparation methods of -Ga2O3 single crystals, the electrical and optical properties of Ta5+ and Nb5+ doped -Ga2O3 single crystals are reviewed.

Key words: material, -Ga2O3 single crystal, preparation method, optical properties, electrical properties

CLC Number:

O734+.3

WANG Chao, SAI Qinglin∗, QI Hongji∗. Research progress on photoelectric properties of Ta5+ and Nb5+ doped -Ga2O3 single crystals[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 219-227.

References 25

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Research progress on photoelectric properties of Ta5+ and Nb5+ doped -Ga2O3 single crystals

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