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Research progress of dislocation of YAG crystal
ZHANG Rui , MEI Dajiang , ∗ , SHI Xiaotu , , MA Rongguo , , ZHANG Qingli , ∗ , DOU Renqin , , LIU Wenpeng ,
Chinese Journal of Quantum Electronics
2022, 39 (5):
687-706.
DOI: 10.3969/j.issn.1007-5461.2022.05.002
There exists various defects during the growth of large-size YAG crystals, and dislocation is one
of the main defects. Dislocation can cause stress birefringence, decrease the optical uniformity, increase optical losses, shorten the work life of the crystal and so on, therefore, it is very important to grow YAG
crystal without dislocation or with low dislocation for the development of high-efficiency solid-state laser.
This paper summarizes the research progress of dislocation in YAG crystal at home and abroad in the
recent 40 years, including the research on dislocation in YAG crystal by chemical etching method, the
decoration method, synchrotron radiation method, stress birefringence method, X-ray micro tomography
and light scattering tomography, as well as the application examples of TEM and SEM, and also introduces
the effect of crystal growth process on dislocation density and distribution in crystal. It provides a reference
for the dislocation research and the growth of large-size and high-quality YAG laser crystals.
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