量子电子学报 ›› 2026, Vol. 43 ›› Issue (5): 669-689.doi: 10.3969/j.issn.1007-5461.2026.05.001
• 综述 • 下一篇
铌酸锂晶体的光学特性与量子光学应用(特邀，封面文章)
包芸嘉 1,2, 郭瑞强 2*, 张翼飞 3, 陈昆峰 1*, 薛冬峰 4
- 1 山东大学新一代半导体材料研究院, 晶体材料全国重点实验室, 山东 济南 250100; 2 山东高等技术研究院热科学研究中心, 山东 济南 250103; 3 山东大学集成电路学院, 山东 济南 250101; 4 电子科技大学(深圳)高等研究院, 广东 深圳 518110
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收稿日期:2025-01-02修回日期:2025-03-28出版日期:2026-09-28发布日期:2026-09-30 -
通讯作者:E-mail: ruiqiang.guo@iat.cn; kunfeng.chen@sdu.edu.cn E-mail:E-mail: ruiqiang.guo@iat.cn; kunfeng.chen@sdu.edu.cn -
作者简介:包芸嘉 ( 1999 - ), 女, 四川成都人, 研究生, 主要从事铌酸锂电光性能和热输运性质方面的研究。E-mail: yunjia.bao@mail.sdu.edu.cn -
基金资助:山东省泰山学者项目 (tsqnz20221163, tsqn202312294), 国家自然科学基金重点国际(地区)合作与交流项目 (52220105010), 山东大学齐 鲁青年学者基金
Optical properties of lithium niobate crystals and their applications in quantum optics(Invited, Cover Paper）
BAO Yunjia 1,2, GUO Ruiqiang 2*, ZHANG Yifei 3, CHEN Kunfeng 1*, XUE Dongfeng 4
- 1 State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China; 2 Thermal Science Research Center, Shandong Institute of Advanced Technology, Jinan 250103, China; 3 School of Integrated Circuits, Shandong University, Jinan 250101, China; 4 Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, China
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Received:2025-01-02Revised:2025-03-28Published:2026-09-28Online:2026-09-30
摘要： 铌酸锂(LiNbO3, LN)晶体因其优异的光学特性, 如强二阶非线性光学效应、电光效应、光折变效应和光伏效 应, 被广泛应用于非线性光学、集成光子学以及量子光学等领域。LN 晶体具有较大的二阶非线性极化率, 能有效实 现二次谐波产生、频率转换以及自发参量下转换等非线性过程。特别是随着绝缘体上铌酸锂(LNOI)技术的发展, LN 晶体在集成光子器件中的应用得到进一步拓展, 成为量子光学器件开发的关键平台之一。本文综述了LN 晶体的基 本光学特性, 重点讨论其在量子光学中的应用现状和技术挑战, 包括自发参量下转换、光学频率梳产生、量子光学波 导结构设计等方面, 旨在为LN 材料在量子信息技术中的进一步应用和发展提供参考。此外, 本文还探讨了LNOI 平 台在实现高效量子光学器件方面的潜力, 特别关注了其在量子态操控和量子通信网络构建中展现出的应用前景。
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引用本文
包芸嘉, 郭瑞强, 张翼飞, 陈昆峰, 薛冬峰 . 铌酸锂晶体的光学特性与量子光学应用(特邀，封面文章)[J]. 量子电子学报, 2026, 43(5): 669-689.
BAO Yunjia , GUO Ruiqiang , ZHANG Yifei , CHEN Kunfeng , XUE Dongfeng . Optical properties of lithium niobate crystals and their applications in quantum optics(Invited, Cover Paper）[J]. Chinese Journal of Quantum Electronics, 2026, 43(5): 669-689.
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