导带弯曲对有限深量子阱中激子态影响的研究

量子电子学报

导带弯曲对有限深量子阱中激子态影响的研究

张金凤1，李腾2

1山东外事翻译职业学院信息工程学院，山东威海 264504； 2山东外事翻译职业学院信息化管理办公室，山东威海 264504

出版日期:2018-11-28 发布日期:2018-11-14
通讯作者: 张金凤（1988-），女，山东曲阜人，硕士，助教，主要从事低维半导体激子结合能方面的研究。 E-mail:470671048@qq.com
作者简介:张金凤（1988-），女，山东曲阜人，硕士，助教，主要从事低维半导体激子结合能方面的研究。
基金资助:

Effect of band bending on exciton in a finite-barries quantum well

ZHANG Jinfeng1, LI Teng2

1 College of Information Engineering, Shandong Vocational College of Foreign Affairs Translation, Weihai 264504, China; 2 Information Management Office, Shandong Vocational College of Foreign Affairs Translation, Weihai 264504, China

Published:2018-11-28 Online:2018-11-14
Supported by:

摘要/Abstract

摘要： 基于有效质量近似及变分法，考虑导带弯曲效应，釆用三角势近似量子阱中实际的导带弯曲势，讨论了Cd1-xMnxTe/CdTe量子阱中激子的结合能、玻尔半径、非相关概率，并与方阱进行比较，给出了结合能随阱宽和锰组分的变化情况。结果表明：三角势近似下激子结合能随阱宽呈现先增加后减小的趋势，同方阱相似，但明显小于方阱，且两者的差别随阱宽和锰组份(势垒高度)而增加。研究表明在相关问题的研究中应考虑导带弯曲的修正。

关键词: 光电子学, 变分法, 导带弯曲, 量子阱, 激子

Abstract: Based on effective mass approximation and variational method, the actual band binding potential in quantum well is approximated by the triangular potential considering band bending effect. The binding energy, Bohr radius and non-correlation probability of excitons in Cd1-xMnxTe/CdTe quantum wells are discussed and compared with square wells. The change of binding energy with well width and Mn component is given. Results show that the exciton binding energy increases first and then decreases with well width under the triangular potential approximation, which is similar to square well, but obviously smaller than square well. The difference between them increases with the well width and Mn component (barrier height). Results show that the correction of band bending should be considered in the research of related issues.

Key words: optoelectronics, variational method, band bending, quantum well, exciton

中图分类号:

张金凤1，李腾2 . 导带弯曲对有限深量子阱中激子态影响的研究[J]. 量子电子学报.

ZHANG Jinfeng1, LI Teng2. Effect of band bending on exciton in a finite-barries quantum well[J]. Chinese Journal of Quantum Electronics.

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