6H-SiC基 MPS二极管正向双势垒特性研究

量子电子学报 ›› 2021, Vol. 38 ›› Issue (1): 99-107.

6H-SiC基 MPS二极管正向双势垒特性研究

郑丽君,刘春娟,汪再兴,孙霞霞,刘晓忠

兰州交通大学电子与信息工程学院, 甘肃兰州730070

收稿日期:2020-04-20 修回日期:2020-07-14 出版日期:2021-01-28 发布日期:2021-02-01
通讯作者: E-mail: liuchj@mail.lzjtu.cn E-mail:641683494@qq.com
作者简介:郑丽君( 1992 - ), 女, 甘肃临洮人, 研究生, 主要从事半导体器件和集成光学方面的研究。E-mail: 641683494@qq.com
基金资助:
Supported by Project of Science and Technology of Gansu Province (甘肃省科学技术资助项目, 1610RJZA046)

Investigation of forward double barrier characteristics of 6H-SiC based MPS diodes

ZHENG Lijun, LIU Chunjuan, WANG Zaixing, SUN Xiaxia, LIU Xiaozhong

School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China

Received:2020-04-20 Revised:2020-07-14 Published:2021-01-28 Online:2021-02-01
Contact: ZHENG LijunZHENG E-mail:641683494@qq.com

摘要/Abstract

摘要： 势垒高度和理想因子n 是混合肖特基/PIN (MPS) 二极管正向输运下的重要参数, 而软度因子是MPS 反向恢复能力的衡量指标之一。对6H-SiC 基MPS 二极管进行结构模拟仿真, 验证了双势垒的存在, 并研究了温度对正反向特性的影响。结果表明: 正向偏压下, 温度升高, 势垒高度1 下降, 势垒高度2 增大, n1 和n2 均随温度升高而下降。势垒1 区域存在多重复合输运机制, 势垒2 区域主要以热电子发射输运为主。反向偏压下, 反向恢复峰值电压、峰值电流均随温度的升高而增大, 但软度因子逐渐趋近于1。

关键词: 光电子学, 6H-SiC MPS, 势垒高度, 理想因子, 软度因子, 缺陷

Abstract: Barrier height and ideal factor n are important parameters for forward transport of merged PIN/Schottky (MPS) diodes, and softness factor is one of the indication of MPS reverse recovery. The structure simulation of 6H-SiC based MPS diode is carried out to verify the existence of double barrier and study the effect of temperature on the forward and reverse characteristics. Results show that in forward bias voltage, the barrier height 1 decreases and the barrier height 2 increases with increasing temperature, while both n1 and n2 decrease with increasing temperature. Because there are multiple composite transport mechanisms in the barrier region 1, and thermionic emission transport is the main transport mechanism in the barrier region 2. Under reverse bias voltage, the reverse recovery peak voltage and peak current increase with increasing temperature, but the softness factor gradually approaches 1.

Key words: optoelectronics, 6H-SiC MPS, barrier height, ideal factor, softness factor, defect

中图分类号:

TN510.30

郑丽君刘春娟汪再兴孙霞霞刘晓忠. 6H-SiC基 MPS二极管正向双势垒特性研究[J]. 量子电子学报, 2021, 38(1): 99-107.

ZHENG Lijun, LIU Chunjuan, WANG Zaixing, SUN Xiaxia, LIU Xiaozhong. Investigation of forward double barrier characteristics of 6H-SiC based MPS diodes[J]. Chinese Journal of Quantum Electronics, 2021, 38(1): 99-107.

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