J4 ›› 2014, Vol. 31 ›› Issue (2): 239-244.

• Semiconductor Opto-electronics • Previous Articles     Next Articles

Calculation and correction of Nano-level quantum dots

SHAN Yihong,FENG Shimeng,LEI Gang, JU Xuemei,ZHOU Ling,YANG Shuquan   

  1. 1 Physics Department of Shanghai Jiaotong University, Shanghai 200240, China; 2 Shanghai Space Power Research Institute, Shanghai 201109, China; 3 Shanghai Academy of Spaceflight Technology, Shanghai 200245,China
  • Published:2014-03-28 Online:2014-03-20

Abstract: The relationship between quantum dot and energy level was analyzed using a simple model and the equation about the energy level and quantum dot size was developed in this paper. The electron wave function within quantum dot does not fully meet the Standing wave condition for the existence of surface wave attenuation, so a correction factor expression was introduced the equation about energy level of quantum dot. And the calculation method of the correction factor was introduced in this paper. The theory calculation shows that the gap between energy level of quantum dot is not only related to the quantum dot size but its boundary conditions. The surface potential barrier has an important impact on the energy level of the quantum dot and the energy gap especially for non-smooth surface.

Key words: optoelectronics, quantum dot, semiconductor, energy level, energy gap

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