Chinese Journal of Quantum Electronics ›› 2021, Vol. 38 ›› Issue (1): 99-107.
• Semiconductor Opto-electronics • Previous Articles Next Articles
ZHENG Lijun, LIU Chunjuan, WANG Zaixing, SUN Xiaxia, LIU Xiaozhong
Received:
2020-04-20
Revised:
2020-07-14
Published:
2021-01-28
Online:
2021-02-01
Contact:
ZHENG LijunZHENG
E-mail:641683494@qq.com
CLC Number:
ZHENG Lijun, LIU Chunjuan, WANG Zaixing, SUN Xiaxia, LIU Xiaozhong. Investigation of forward double barrier characteristics of 6H-SiC based MPS diodes[J]. Chinese Journal of Quantum Electronics, 2021, 38(1): 99-107.
[1] | Sun X X, Wang Z X, Liu X Z, et al. Minority carrier characteristics simulation of MPS diodes [J]. Semiconductor Technology, |
20 | 19, 44(4): 270-275, 285. |
孙霞霞, 汪再兴, 刘晓忠, 等. MPS二极管的少子特性仿真[J]. 半导体技术, 2019, 44(4): 270-275, 285. | |
[2] | Yin H, Hong Z Y, Ding C Y. Research of performance test system of avalanche diode [J]. Chinese Journal of Quantum Electronics, |
20 | 20, 37(3): 321-327. |
尹航, 洪占勇, 丁传杨. 雪崩光电二极管性能测试系统的研究[J]. 量子电子学报, 2020, 37(3): 321-327. | |
[3] | Huang Y,Wachutka G. Comparative study of contact topographies of 4.5 kV SiC MPS diodes for optimizing the forward characteristics |
[C] | 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, |
20 | 16, 201: 117-120. |
[4] | Niwa H, Suda J, Kimoto T. Ultrahigh-voltage SiC MPS diodes with hybrid unipolar/bipolar operation [J]. IEEE Transactions |
on Electron Devices, 2017, 3: 874-881. | |
[5] | TangWH, Fang H, Li F S, et al. Theoretical research of electronic structure and optical properties of Al-doped TiO2 crystalline |
materials [J]. Chinese Journal of Quantum Electronics, 2019, 36(1): 116-122. | |
唐文翰, 房慧, 李凡生, 等. Al 掺杂TiO2 基晶体材料电子结构及光学性质的理论研究[J]. 量子电子学报, 2019, 36(1): | |
11 | 6-122. |
[6] | Yu X X, Zhou J J, Wang Y F, et al. Study on high current density diamond Schottky barrier diode [J]. Chinese Journal of |
Research and Development of Solid State Electronics, 2019, 39(2): 77-80, 85. | |
郁鑫鑫, 周建军, 王艳丰, 等. 高电流密度金刚石肖特基势垒二极管研究[J]. 固体电子学研究与进展, 2019, 39(2): 77-80, | |
85. | |
[7] | Li Y P, Li Y F, He Z R, et al. Research progress of Schottky contact barrier model of metal and semiconductor and its carrier |
transport mechanism [J]. Chinese Journal of Materials Review, 2017, 31(3): 57-62. | |
李亚鹏, 李颖峰, 贺志荣, 等. 金属与半导体肖特基接触势垒模型及其载流子传输机制的研究进展[J]. 材料导报, 2017, | |
31 | (3): 57-62. |
[8] | Wu H, Kang X W, Yang B, et al. Forward current transport mechanism of recess-free AlGaN/GaN Schottky barrier diodes [J]. |
Chinese Journal of Semiconductor Technology, 2019, 44(6): 426-432. | |
吴昊, 康玄武, 杨兵, 等. 无凹槽AlGaN/GaN 肖特基势垒二极管正向电流输运机制[J]. 半导体技术, 2019, 44(6): | |
42 | 6-432. |
[9] | Cuong V V, Ishikawa S, Maeda T, et al. High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment |
applications [J]. Thin Solid Films, 2019, 669: 306-314. | |
[10] | Palenskis V, Glem˘za J, Vy˘sniauskas J, et al. Carrier density and mobility fluctuations due to carrier retrapping process in |
homogeneous semiconductors [C]. 2017 International Conference on Noise and Fluctuations (ICNF), Vilnius, 2017. | |
[11] | Nipoti R, Ayedh H M, Svensson B G. Defects related to electrical doping of 4h-sic by ion implantation [J]. Materials Science |
in Semiconductor Processing, 2017, 78: 13-21. | |
[12] | Ahaitouf A, Srour H, Hamady S O S, et al. Interface state effects in GaN Schottky diodes [J]. Thin Solid Films, 2012, 522: |
34 | 5-351. |
[13] | Kim S, Kim H K, Jeong S, et al. Carrier transport mechanism of Al contacts on n-type 4H-SiC [J]. Materials Letters, 2018, |
22 | 8: 232-234. |
[14] | Mamor M. Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts [J]. Journal of |
Physics, Condensed Matter, 2009, 21(33): 335802. |
[1] | LYU Haiyan, , HONG Zhanyong, DU Xianchang, . Research on refrigeration system of single−photon detector [J]. Chinese Journal of Quantum Electronics, 2023, 40(3): 400-406. |
[2] | ZHANG Ruoya , ZHU Qiaofen , ZHANG Yan . Research progress of tunable terahertz metamaterial absorbers [J]. Chinese Journal of Quantum Electronics, 2023, 40(3): 301-318. |
[3] | XU Jianwei , OUYANG Shoujian , DUAN Shouxin , ZOU Liner , , DENG Xiaohua , SHEN Yun, . Terahertz planar toroidal dipole metamaterial sensor for detecting gutter oil [J]. Chinese Journal of Quantum Electronics, 2023, 40(3): 333-339. |
[4] | CHEN Qiming , FU Renxuan , XU Yongjun , LIU Yibiao , ZHOU Jinyun , SONG Xianwen. Fabrication of SU-8 microstructure and PDMS concentration gradient generator by moving focal plane front and back exposure [J]. Chinese Journal of Quantum Electronics, 2023, 40(3): 415-422. |
[5] | PAN Xiaokai , JIANG Mengjie , , WANG Dong , , LYU Xuyang , , LAN Shiqi , , WEI Yingdong , , HE Yuan , , GUO Shuguang , , CHEN Pingping , WANG Lin ∗ , CHEN Xiaoshuang , LU Wei . Application and frontier trend of infrared-terahertz photoelectric detector [J]. Chinese Journal of Quantum Electronics, 2023, 40(2): 217-237. |
[6] | DONG Qinlu, HAN Yiping ∗ , ZHANG Qifan. Transmission characteristics of terahertz waves in a hypersonic target plasma sheath [J]. Chinese Journal of Quantum Electronics, 2023, 40(2): 258-266. |
[7] | YAO Bozhi , SHI Lili , WU Jingbo , , CHEN Jian , ∗ , WU Peiheng , . Readout of high-sensitive terahertz detector arrays at low temperature [J]. Chinese Journal of Quantum Electronics, 2023, 40(2): 267-274. |
[8] | WANG Chenyu ♯ , LIAO Yu ♯ , MEI Zhijie, LIU Xudong, SUN Yiwen ∗. A terahertz modulator based on GaAs surface plasma grating array structure [J]. Chinese Journal of Quantum Electronics, 2023, 40(2): 275-281. |
[9] | ZHANG Rui , MEI Dajiang , ∗ , SHI Xiaotu , , MA Rongguo , , ZHANG Qingli , ∗ , DOU Renqin , , LIU Wenpeng , . Research progress of dislocation of YAG crystal [J]. Chinese Journal of Quantum Electronics, 2022, 39(5): 687-706. |
[10] | WU Renglai∗, YU Yabin, XIAO Shifa, QUAN Jun. Correction of plasmon dispersion relation due to thickness of monolayer-atom system [J]. Chinese Journal of Quantum Electronics, 2022, 39(4): 541-548. |
[11] | WANG Yang, LI Xin∗, HUANG Xionghao, LIU Enchao, Zhang Yanna. Design of wavelength scanning for solar spectral irradiance instrument [J]. Chinese Journal of Quantum Electronics, 2022, 39(4): 519-530. |
[12] | MENG Weili∗, WANG Qingqing, SHAO Jing, CHENG Hongwei, GONG Hao. Device performance dependence on photoactive composition in graphene-based hybrid solar cells [J]. Chinese Journal of Quantum Electronics, 2022, 39(4): 613-619. |
[13] | Zhang Li∗, Wang Qi. Fr¨ohlich electron-phonon interaction Hamiltonian in GaN nanowires with triangular cross-section [J]. Chinese Journal of Quantum Electronics, 2022, 39(4): 632-643. |
[14] | XU Wenhao, SHOU Yichang, LUO Hailu∗. Spin-orbit interaction of light [J]. Chinese Journal of Quantum Electronics, 2022, 39(2): 159-181. |
[15] | ZHOU Lunbin , WANG Dong , XU Bin ∗ , LIAO Tingdi. Research on direct generation of hollow structured laser beam based on a spot defect mirror [J]. Chinese Journal of Quantum Electronics, 2022, 39(1): 142-149. |
Viewed | ||||||||||||||||||||||||||||||||||||||||||||||||||
Full text 498
|
|
|||||||||||||||||||||||||||||||||||||||||||||||||
Abstract 549
|
|
|||||||||||||||||||||||||||||||||||||||||||||||||