Chinese Journal of Quantum Electronics ›› 2021, Vol. 38 ›› Issue (2): 172-179.

• Special Issue on Advanced Optical Crystal • Previous Articles     Next Articles

Growth of a new long-wave infrared material PbGa6Te10

HAN Weimin1;2, NI Youbao1∗, WU Haixin1;2, WANG Zhenyou1, HUANG Changbao1   

  1. 1 Anhui Provincial Key Laboratory of Photonic Devices and Material, Anhui Institute of Optics and Fine Mechanics, Hefei Institute of Physical Science, Chinese Academy of Sciences, Hefei 230031, China; 2 University of Science and Technology of China, Hefei 230026, China
  • Received:2020-10-26 Revised:2020-11-19 Published:2021-03-28 Online:2021-03-29
  • Contact: You baoNi E-mail:465602251@qq.com

Abstract: The new long-wave infrared material PbGa6Te10 has great application potential due to its high refractive index ( > 3), wide infrared transmittance range (1:4 ∼ 22:3 m), good stability and mechanical properties. However, PbGa6Te10 is a non-identical eutectic compound, which can easily lead to segregation of components and the formation of heterogeneous phases. For this reason, high quality PbGa6Te10 polycrystal is synthesized by the oscillation-assisted single-temperature zone method, and the single crystal with a length of 100 mm and a maximum diameter of 26 mm is grown by the vertical Bridgman method. The as-grown crystals are characterized by X-ray powder diffraction, rocking curve, thermogravimetric differential thermal analysis, infrared transmittance, et al. Results show that the grown crystal is PbGa6Te10 single crystal. It is crystallized well, and the full width at half maximum (FHWM) is 0.214◦. The crystal has good thermal stability. The band gap value of PbGa6Te10 calculated from the diffuse reflection absorption curve is 1.01 eV, and the transmittance curve shows that the average transmittance from 2.5 m to 22.3 m is about 28%.

Key words: crystal growth, long-wave infrared materials, PbGa6Te10, Bridgman method, oscillation-assistance

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