小偏压下阱中阱结构的量子隧穿特性及其实现

J4 ›› 2011, Vol. 28 ›› Issue (5): 629-634.

小偏压下阱中阱结构的量子隧穿特性及其实现

安盼龙^1,3,赵瑞娟^2,3

1 中北大学电子测试技术国家重点实验室, 山西太原 030051;
2 中北大学仪器科学与动态测试教育部重点实验室, 山西太原 030051;
3中北大学理学院, 山西太原 030051

收稿日期:2010-08-27 修回日期:2011-01-10 出版日期:2011-09-28 发布日期:2011-08-18
通讯作者: 安盼龙（1978－）陕西渭南人，硕士,讲师,研究方向为纳米功能材料。 E-mail:material_physics@126.com
基金资助:
中北大学仪器科学与动态测试教育部重点实验室资助(20102011)、.中北大学校青年基金资助

Quantum tunneling properties and realization in low-biased well of wells structures

An Panlong ^1,3, Zhao Ruijuan ^2,3

1 National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China;
2 Key Laboratory of Instrument Science & Dynamic Measurement, North University of China, Ministry of Education, Taiyuan 030051, China;
3 School of Science ,North University of China, Taiyuan 030051, China

Received:2010-08-27 Revised:2011-01-10 Published:2011-09-28 Online:2011-08-18

摘要/Abstract

摘要：

共振隧穿是电子的隧穿概率在某一个能量值附近以尖锐的峰值形式出现的隧穿，是目前为止最有希望应用到实际电路和系统的量子器件之一，其特点是器件的响应速度非常快。本文用传递矩阵的方法分别计算了在外加偏压下,对称双势垒、三势垒应变量子阱结构的透射系数与入射电子能量和隧穿电流与偏置电压的关系,模拟了应变多量子阱结构的隧穿系数和I-V特性曲线。计算得到隧穿电流峰值位置与实验测试值符合得很好,对于设计共振隧穿二极管并为进一步实验提供理论指导具有重要的意义。

关键词: 光电子学, 量子阱, 共振隧穿, 透射系数, 隧穿电流

Abstract:

Resonant tunneling which is the tunneling probability of electron in a certain energy value in the vicinity of the form of a sharp peak in tunneling, is by far the most promising application to the actual circuit and system of quantum devices, characterized by the response speed of the device very quickly. In this paper, the transfer matrix method calculates relations between transmission coefficient of the symmetric double-barrier, three-barrier quantum well structure strain and incident electron energy and tunneling current and bias voltage, simulated tunneling coefficient and the I-V curve of strained multi-quantum well structure. By theoretical calculation, the tunneling current peak value with the experimental values are in good, for the design of resonant tunneling diodes and to provide theoretical guidance for the further experiment of great significance.

Key words: optoelectronics, quantum well, resonant tunneling, transmission coefficient, tunneling current

中图分类号:

O471.1

安盼龙赵瑞娟. 小偏压下阱中阱结构的量子隧穿特性及其实现[J]. J4, 2011, 28(5): 629-634.

An Panlong, Zhao Ruijuan. Quantum tunneling properties and realization in low-biased well of wells structures[J]. J4, 2011, 28(5): 629-634.

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