近期光刻用ArF准分子激光技术发展

J4 ›› 2010, Vol. 27 ›› Issue (5): 522-527.

近期光刻用ArF准分子激光技术发展

游利兵¹,周翊²,梁勖¹,余吟山¹,方晓东¹,王宇²

1 中国科学院安徽光学精密机械研究所安徽省光子器件与材料重点实验室，安徽合肥 230031;
2 中国科学院光电研究院，北京，100085

收稿日期:2009-10-28 修回日期:2009-11-23 出版日期:2010-09-28 发布日期:2010-08-31
通讯作者: 游利兵(1981-)，男(汉)，四川省泸州市人，博士，主要研究工作是准分子激光技术、脉冲电源技术。 E-mail:youlibing@126.com

Recent development of ArF excimer laser technology for lithography

YOU Li-bing¹, ZHOU Yi²,　LIANG Xu¹, YU Yin-shan¹, FANG Xiao-dong¹, WANG Yu²

1 The Key Laboratory of Photonic Devices and Materials, Anhui Province, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China;
2 Academy of Opto-Electronics, Chinese Academy of Sciences, Beijing 100080, China

Received:2009-10-28 Revised:2009-11-23 Published:2010-09-28 Online:2010-08-31

摘要/Abstract

摘要：

193 nm ArF准分子激光光刻技术已广泛应用于90 nm以下节点半导体量产。ArF浸没式也已进入45 nm节点量产阶段。双图形光刻（DPL）技术被业界认为是下一代光刻32 nm节点最具竞争力的技术。利用双图形技术达到32 nm及以下节点已经被诸多设备制造商写入自己的技术发展线路。Cymer公司和Gigaphoton公司为双图形光刻开发了高输出功率、高能量稳定性和具有稳定的窄谱线宽度ArF准分子光源。分析了近期发展用于改进准分子激光性能的关键技术：主振-功率再生放大(MOPRA)结构、主振-功率振荡(MOPO)结构，主动光谱带宽稳定技术，先进的气体管理技术。对光刻用准分子激光光源技术发展趋势进行了简要的讨论。

关键词: 激光技术, ArF准分子激光, 光刻, 双图形

Abstract:

193 nm ArF excimer lasers are widely used from below 90 nm node in semiconductor mass production. ArF immersion lithography technology has been used to volume production at the 45 nm node. Double patterning lithography (DPL) is considered to be the most promising technology to meet the requirement associated with the next-generation half pitches of 32 nm node. Double patterning has now become a fixture on the development roadmaps of many device manufacturers for 32 nm and beyond. Cymer and Gigaphoton have developed higher power, higher energy stability and stable narrower spectral bandwidth ArF excimer laser for double patterning lithography. The key technologies recently employed to improve performance of ArF excimer lasers are analyzed.：Master Oscillator Power Regenerative Amplifier (MOPRA) and Master Oscillator Power Oscillator (MOPO) configurations, active bandwidth stabilization technology, advanced gas management technology. At last, development trend of excimer laser technology for lithography is briefly discussed.

Key words: laser technology, ArF excimer laser, lithography, double patterning

游利兵周翊梁勖余吟山方晓东王宇. 近期光刻用ArF准分子激光技术发展[J]. J4, 2010, 27(5): 522-527.

YOU Li-bing, ZHOU Yi,　LIANG Xu, YU Yin-shan, FANG Xiao-dong, WANG Yu. Recent development of ArF excimer laser technology for lithography[J]. J4, 2010, 27(5): 522-527.

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