应用于极紫外光刻系统多层膜的研究进展

摘要/Abstract

摘要： 极紫外光刻是采用波长为13.5nm的极紫外光作为光源，实现半导体集成电路工艺22纳米以及更窄线宽节点的主要候选光刻技术。性能优越稳定的多层膜技术是构建整个极紫外光刻系统的重要技术之一。从高反射率，波长匹配，控制面形以及稳定性和寿命方面总结了极紫外光刻系统中多层膜的性能要求和最新的研究进展，叙述了制备高性能多层膜的方法和沉积设备，讨论了多层膜制备技术还存在的问题和发展的方向。

关键词: 激光技术, 极紫外光刻, 极紫外多层膜, 沉积方法

Abstract: Extreme Ultraviolet lithography has become the key candidate of lithography tools to manufacture devices at the 22nm node and beyond of semiconductor integrated circuit, which makes use of the extreme ultraviolet rays with 13.5nm wavelength as the light source. It is one of approaches to construct a normal incidence optical system by using the excellent performance multilayer coatings. In this paper, a review is given of the specification of the coatings for Extreme Ultraviolet lithography (EUVL) and the recent progress in multilayered systems. The key deposition methods and equipments that produce such coatings are discussed. Furthermore, in terms of high reflectance, wavelength matching, profile matching, life and stability, it also concludes the problems existed in the preparation technologies of the multilayered systems and the future direction of the development.

Key words: laser techniques, extreme ultraviolet lithography, EUV multilayer coatings, deposition method

中图分类号:

O475

秦娟娟董伟伟周曙游利兵方晓东. 应用于极紫外光刻系统多层膜的研究进展[J]. J4, 2014, 31(1): 1-11.

Qin Juanjuan, Dong Weiwei, Zhou Shu, You Libing, Fang Xiaodong. Recent advances in multilayer coatings for EUV lithography[J]. J4, 2014, 31(1): 1-11.

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